Plasmochemical Etching of Silicon in Diener Nano Device

Authors

  • M. Urbánek Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, Brno
  • S. Krátký Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, Brno
  • M. Matějka Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, Brno
  • V. Kolařík Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, Brno
  • M. Horáček Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, Brno

Keywords:

plasma chemical etching, silicon, etching rate, etching selectivity

Abstract

This article deals with plasma etching of Si in a CF4/O2 mixture. This is a common way of Si etching used in micro- and nanofabrication. We determined important parameters such as etching rates and selectivity of Si and PMMA of the process. Experimental part was carried out on plasma system Diener nano.

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Published

2014-06-15

How to Cite

Urbánek, M., Krátký, S., Matějka, M., Kolařík, V., & Horáček, M. (2014). Plasmochemical Etching of Silicon in Diener Nano Device. Chemické Listy, 108(6), 592–595. Retrieved from http://chemicke-listy.cz/ojs3/index.php/chemicke-listy/article/view/485

Issue

Vol. 108 No. 6 (2014)

Section

Articles

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