Plasmochemical Etching of Silicon in Diener Nano Device

Page: 592

M. Urbánek, S. Krátký, M. Matějka, V. Kolařík, and M. Horáček

Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, Brno


This article deals with plasma etching of Si in a CF4/O2 mixture. This is a common way of Si etching used in micro- and nanofabrication. We determined important parameters such as etching rates and selectivity of Si and PMMA of the process. Experimental part was carried out on plasma system Diener nano.


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